Invention Grant
- Patent Title: 1-Selector n-Resistor memristive devices
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Application No.: US15128244Application Date: 2014-04-10
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Publication No.: US09911789B2Publication Date: 2018-03-06
- Inventor: Jianhua Yang , Gary Gibson , Zhiyong Li
- Applicant: Hewlett Packard Enterprise Development LP
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: Mannava & Kang, P.C.
- International Application: PCT/US2014/033583 WO 20140410
- International Announcement: WO2015/156805 WO 20151015
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L27/24 ; H01L45/00 ; G11C13/00

Abstract:
A 1-Selector n-Resistor memristive device includes a first electrode, a selector, a plurality of memristors, and a plurality of second electrodes. The selector is coupled to the first electrode via a first interface of the selector. Each memristor is coupled to a second interface of the selector via a first interface of each memristor. Each second electrode is coupled to one of the memristors via a second interface of each memristor.
Public/Granted literature
- US20170110515A1 1-SELECTOR N-RESISTOR MEMRISTIVE DEVICES Public/Granted day:2017-04-20
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