Invention Grant
- Patent Title: Semiconductor device structure and method for forming the same
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Application No.: US14940832Application Date: 2015-11-13
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Publication No.: US09911821B2Publication Date: 2018-03-06
- Inventor: Chi-Ruei Yeh , Chih-Lin Wang , Kang-Min Kuo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L21/02 ; H01L21/768 ; H01L29/40 ; H01L29/423 ; H01L29/45 ; H01L29/78
Abstract:
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a metal gate electrode structure over the semiconductor substrate. The semiconductor device structure includes an insulating layer over the semiconductor substrate and surrounding the metal gate electrode structure. The semiconductor device structure includes a first metal nitride layer over a first top surface of the metal gate electrode structure and in direct contact with the metal gate electrode structure. The first metal nitride layer includes a nitride material of the metal gate electrode structure.
Public/Granted literature
- US20170141205A1 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2017-05-18
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