Invention Grant
- Patent Title: FinFETs with contact-all-around
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Application No.: US15215268Application Date: 2016-07-20
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Publication No.: US09911830B2Publication Date: 2018-03-06
- Inventor: Yu-Lien Huang , Tung Ying Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/66 ; H01L29/78 ; H01L27/12 ; H01L21/306 ; H01L21/311

Abstract:
An integrated circuit structure includes a semiconductor substrate, a semiconductor fin over the semiconductor substrate, a gate stack on a top surface and a sidewall of the semiconductor fin, a source/drain region on a side of the gate stack, and a contact plug encircling a portion of the source/drain region.
Public/Granted literature
- US20160329416A1 Finfets With Contact-All-Around Public/Granted day:2016-11-10
Information query
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