Invention Grant
- Patent Title: Diode laser type device
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Application No.: US12803476Application Date: 2010-06-28
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Publication No.: US09912118B2Publication Date: 2018-03-06
- Inventor: Iulian Basarab Petrescu-Prahova
- Applicant: Iulian Basarab Petrescu-Prahova
- Agency: Graham Curtin, P.A.
- Main IPC: H01S5/20
- IPC: H01S5/20 ; H01S5/10 ; H01S5/028 ; H01S5/16

Abstract:
Semiconductor laser with mirror facet protection against degradation including a modified segment near the exit window that has a double waveguide with a reduced confinement factor compared with the confinement factor of the double waveguide of the main laser segment, such that the radiation at the exit facet in the modified double waveguide is pushed away from the active region, less radiation is absorbed at the facet and less heat is produced by nonradiative recombination at the exit facet, while the field distribution of the two double waveguides have a good overlap and low transfer losses due to the use of waveguide type structures with an active waveguide and a passive trapping waveguide.
Public/Granted literature
- US20110317730A1 Diode laser type device Public/Granted day:2011-12-29
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