Invention Grant
- Patent Title: High loop-gain pHEMT regulator for linear RF power amplifier
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Application No.: US15600866Application Date: 2017-05-22
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Publication No.: US09912296B1Publication Date: 2018-03-06
- Inventor: Peng Cheng , Swaminathan Muthukrishnan , David Antopolsky , Jeremiah J. Smith , Nancy Schaefer , Randy Naylor
- Applicant: Qorvo US, Inc.
- Applicant Address: US NC Greensboro
- Assignee: Qorvo US, Inc.
- Current Assignee: Qorvo US, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H04B1/16
- IPC: H04B1/16 ; H03F1/02 ; H03F3/195 ; H03F3/24 ; H03F3/72 ; H03G3/00 ; H03G3/30

Abstract:
Voltage regulator circuitry includes a first gain stage, a second gain stage, and a feedback stage. Feedback is provided between the feedback stage, the second gain stage, and the first gain stage in order to tightly regulate an output voltage of the voltage regulator circuitry such that the output voltage is independent of process variations present in the devices therein. The voltage regulator circuitry is fabricated using a pseudomorphic high electron mobility transistor (pHEMT) process in order to reduce the size thereof and provide short turn-on times and low quiescent current.
Public/Granted literature
- US20180054167A1 HIGH LOOP-GAIN PHEMT REGULATOR FOR LINEAR RF POWER AMPLIFIER Public/Granted day:2018-02-22
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