Invention Grant
- Patent Title: Semiconductor device and driving system
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Application No.: US15390020Application Date: 2016-12-23
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Publication No.: US09912329B2Publication Date: 2018-03-06
- Inventor: Ikuo Fukami
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Koutou-ku, Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Koutou-ku, Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2013-150647 20130719
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K17/081 ; H02P7/28 ; H01L27/088 ; H02M3/07

Abstract:
A semiconductor device includes a high side driver, in which the high side driver has an output transistor configured to supply a power voltage to an output terminal based on a driving voltage applied to a gate electrode of the output transistor; a short circuit transistor configured to couple the gate electrode of the output transistor with the output terminal; and a switch transistor connected in series between the gate electrode of the output transistor and a drain electrode of the short circuit transistor. The switch transistor is controlled by a back gate of the switch transistor.
Public/Granted literature
- US20170111038A1 SEMICONDUCTOR DEVICE AND DRIVING SYSTEM Public/Granted day:2017-04-20
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