- Patent Title: Control circuits of collector current of substrate bipolar junction transistors and circuits of compensating for base current for generating a proportional to absolute temperature (PTAT) voltage using the control circuits
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Application No.: US15421055Application Date: 2017-01-31
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Publication No.: US09912330B2Publication Date: 2018-03-06
- Inventor: Hee Jun Kim , Sang Won Lee , Hang Geun Jeong
- Applicant: SK hynix Inc. , INDUSTRIAL COOPERATION FOUNDATION CHONBUK NATIONAL UNIVERSITY
- Applicant Address: KR Icheon-si KR Jeonju-si, Jeollabuk-do
- Assignee: SK hynix Inc.,INDUSTRIAL COOPERATION FOUNDATION CHONBUK NATIONAL UNIVERSITY
- Current Assignee: SK hynix Inc.,INDUSTRIAL COOPERATION FOUNDATION CHONBUK NATIONAL UNIVERSITY
- Current Assignee Address: KR Icheon-si KR Jeonju-si, Jeollabuk-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2016-0083617 20160701
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K17/567 ; H01L29/08 ; H01L27/06

Abstract:
A circuit for controlling a collector current of a substrate bipolar junction transistor (BJT) is provided. The circuit includes a first current mirror configured to generate a first mirroring base current corresponding to a replicate current of a base current of the substrate BJT, a current transmitter configured to transmit the first mirroring base current, a second current mirror configured to generate a second mirroring base current corresponding to a replicate current of the first mirroring base current received from the current transmitter and configured to supply the second mirroring base current to an emitter of the substrate BJT, and a current source configured to supply a drive current corresponding to a collector current of the substrate BJT to the emitter of the substrate BJT.
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