A gate driver integrated circuit for driving a gate of an IGBT or MOSFET receives an input signal. In response to a rising edge of the input signal, the integrated circuit causes the gate to be driven in a first sequence of time periods. In each period, the gate is driven high (pulled up) via a corresponding one of a plurality of different effective gate resistances. In response to a falling edge of the input signal, the integrated circuit causes the gate to be driven in a second sequence of time periods. In each period, the gate is driven low (pulled down) via a corresponding one of the different effective gate resistances. In one example, the duration of each time period is set by a corresponding external passive circuit component. The different effective gate resistances are set by external gate resistors disposed between the integrated circuit and the gate.