Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US15233724Application Date: 2016-08-10
-
Publication No.: US09912332B2Publication Date: 2018-03-06
- Inventor: Yuichi Goto
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2016-050079 20160314
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K17/687 ; H01L29/20 ; H01L29/778 ; H01L29/78 ; H01L27/06

Abstract:
A semiconductor device includes a first transistor and a second transistor connected in series between a first voltage source and a second voltage source. A diode is connected between a gate of the first transistor and the second voltage source. A capacitor is connected to the gate of the first transistor. A first driver is connected to the gate of the first transistor through the capacitor. A second driver is connected to a gate of the second transistor. A threshold voltage of the second transistor is higher than a threshold voltage of the first transistor.
Public/Granted literature
- US20170264286A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-09-14
Information query