Invention Grant
- Patent Title: Bonding method for thin film diamond providing low vapor pressure at high temperature
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Application No.: US14961428Application Date: 2015-12-07
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Publication No.: US09914283B2Publication Date: 2018-03-13
- Inventor: Jonathan L. Shaw , Jeremy Hanna
- Applicant: The United States of America, as represented by the Secretary of the Navy
- Applicant Address: US DC Washington
- Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Stephen T. Hunnius
- Main IPC: B32B9/04
- IPC: B32B9/04 ; B32B9/00 ; B32B15/04 ; B32B37/12 ; B32B37/24 ; B32B38/00 ; B32B38/18 ; H01J1/34 ; B23K1/00 ; B23K1/19 ; B32B37/04 ; C23C28/02 ; C23C30/00 ; H01J37/073 ; B23K103/00

Abstract:
A thin diamond film bonded to a diamond substrate made by the process of heating a diamond substrate inside a vacuum chamber to about 500° C., cooling the diamond substrate, coating a first surface of the diamond substrate with chromium, depositing an initial layer of palladium, heating the diamond substrate, allowing the chromium and the diamond substrate to form a chemical bond, inter-diffusing the adhesion layer of chromium and the initial layer of palladium, cooling, depositing palladium, placing a shadow mask, degassing the vacuum, depositing a tin layer, assembling the tin layer, heating the tin layer, melting the tin layer, and bonding the thin diamond film to the diamond substrate. A thin diamond film bonded to a diamond substrate comprising a thin diamond film, a layer of chromium, palladium, tin, and a diamond substrate.
Public/Granted literature
- US20160089740A1 Bonding Method for Thin Film Diamond Providing Low Vapor Pressure at High Temperature Public/Granted day:2016-03-31
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