A semiconductor device drive method achieves a balance between a lifetime and a detection sensitivity which are required for a temperature detection diode formed via an insulating film on a substrate on which an active element is formed. The semiconductor device drive method includes energizing the temperature detection diode with a constant current, the constant current having a current density value between an upper limit defined based on the lifetime of the temperature detection diode, and a lower defined based on a variation allowable voltage of an output voltage of the temperature detection diode with respect to a standard deviation.