- Patent Title: Write driver circuitry to reduce leakage of negative boost charge
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Application No.: US15448526Application Date: 2017-03-02
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Publication No.: US09916892B1Publication Date: 2018-03-13
- Inventor: Pradeep Raj , Rahul Sahu , Mukund Narasimhan , Fahad Ahmed , Chulmin Jung
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: G11C11/419
- IPC: G11C11/419 ; G11C5/14 ; G11C11/412
Abstract:
A pair of write driver inverters are arranged in series to drive a bit line responsive to a data bit input signal. A first boost capacitor provides a negative boost to a first ground node for a first one of the write driver inverters during the write assist period. A second boost capacitor provides a negative boost to a second ground node for a second one of the write driver inverters during the write assist period.
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