A plasma processing apparatus and method to control a temperature of a chamber component therein are described. A process chamber may include a temperature controlled chamber component and at least one remote heat transfer fluid loop comprising a first heat exchanger having a primary side in fluid communication with a heat sink or heat source, and a local heat transfer fluid loop placing the chamber component in fluid communication with a secondary side of the first heat exchanger. The local loop may be of significantly smaller fluid volume than the remote loop(s) and circulated to provide thermal load of uniform temperature. Temperature control of heat transfer fluid in the local loop and temperature control of the chamber component may be implemented with a cascaded control algorithm. The plasma processing apparatus further includes an AC heated electrostatic chuck (ESC) assembly.