Invention Grant
- Patent Title: Low k dielectric deposition via UV driven photopolymerization
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Application No.: US14942704Application Date: 2015-11-16
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Publication No.: US09916977B2Publication Date: 2018-03-13
- Inventor: Patrick A. Van Cleemput , Nicholas Muga Ndiege , Jonathan D. Mohn
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: H01L21/469
- IPC: H01L21/469 ; H01L21/02 ; H01L21/3105 ; H01L21/687 ; H01L23/532 ; H01L21/285 ; C23C16/00 ; H01L21/768
Abstract:
Provided are methods and apparatus for ultraviolet (UV) assisted capillary condensation to form dielectric materials. In some embodiments, a UV driven reaction facilitates photo-polymerization of a liquid phase flowable material. Applications include high quality gap fill in high aspect ratio structures and por sealing of a porous solid dielectric film. According to various embodiments, single station and multi-station chambers configured for capillary condensation and UV exposure are provided.
Public/Granted literature
- US20170140931A1 LOW K DIELECTRIC DEPOSITION VIA UV DRIVEN PHOTOPOLYMERIZATION Public/Granted day:2017-05-18
Information query
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