Invention Grant
- Patent Title: Indium phosphide smoothing and chemical mechanical planarization processes
-
Application No.: US15160118Application Date: 2016-05-20
-
Publication No.: US09916985B2Publication Date: 2018-03-13
- Inventor: Henry A. Beveridge , Tatsuyoshi Kawamoto , Mahadevaiyer Krishnan , Yohei Oishi , Dinesh Kumar Penigalapati , Rachel S. Steiner , James A. Tornello , Tatsuya Yamanaka
- Applicant: International Business Machines Corporation , JSR CORPORATION
- Applicant Address: US NY Armonk JP Tokyo
- Assignee: International Business Machines Corporation,JSR CORPORATION
- Current Assignee: International Business Machines Corporation,JSR CORPORATION
- Current Assignee Address: US NY Armonk JP Tokyo
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L29/06 ; H01L21/8238 ; H01L21/02 ; H01L21/768 ; C09G1/02
Abstract:
A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.
Public/Granted literature
- US20170110332A1 INDIUM PHOSPHIDE SMOOTHING AND CHEMICAL MECHANICAL PLANARIZATION PROCESSES Public/Granted day:2017-04-20
Information query
IPC分类:
