Invention Grant
- Patent Title: Single or mutli block mask management for spacer height and defect reduction for BEOL
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Application No.: US15193759Application Date: 2016-06-27
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Publication No.: US09916986B2Publication Date: 2018-03-13
- Inventor: Benjamin D. Briggs , Lawrence A. Clevenger , Yann A. Mignot
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/30 ; H01L21/46 ; H01L21/44 ; H01L21/3065 ; H01L21/027 ; H01L21/033 ; H01L21/3105 ; H01L21/02
Abstract:
Aspects of the disclosure include method of making semiconductor structures. Aspects include providing a semiconductor structure including a plurality of spacer, an organic planarization layer, and a SiARC layer. Aspects also include forming an inverted mask on the semiconductor structure, the inverted mask including an inverted mask opening above a portion of the plurality of spacers and a portion of the TiN layer. Aspects also include eroding the portion of the plurality of spacers below the inverted mask opening. Aspects also include depositing a fill material masking the portion of the plurality of spacers below the inverted mask opening and the portion of the TiN layer below the inverted mask opening to generate a masked TiN layer segment and an unmasked TiN layer segment and removing a portion of the unmasked TiN layer segment.
Public/Granted literature
- US20170372909A1 SINGLE OR MUTLI BLOCK MASK MANAGEMENT FOR SPACER HEIGHT AND DEFECT REDUCTION FOR BEOL Public/Granted day:2017-12-28
Information query
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