Invention Grant
- Patent Title: Vapor phase growth method of growing a film on a substrate while heating the substrate with a heating unit
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Application No.: US14707461Application Date: 2015-05-08
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Publication No.: US09916996B2Publication Date: 2018-03-13
- Inventor: Takumi Yamada , Takanori Hayano , Tatsuhiko Iijima , Yuusuke Sato
- Applicant: NUFLARE TECHNOLOGY, INC.
- Applicant Address: JP Yokohama-shi
- Assignee: NuFlare Technology Inc.
- Current Assignee: NuFlare Technology Inc.
- Current Assignee Address: JP Yokohama-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-098901 20140512
- Main IPC: C30B25/16
- IPC: C30B25/16 ; H01L21/67 ; H01L21/66 ; H01L21/02 ; H01L33/00 ; C23C16/52 ; C23C16/46 ; C23C16/30 ; C30B29/40 ; H01L33/12

Abstract:
A vapor phase growth method of growing a film on a substrate by supplying material gases to the substrate while heating the substrate with a heating unit according to an embodiment, the method includes: measuring a temperature of the substrate with a radiation thermometer; executing a temperature feedback control to control an output of the heating unit to cause a measurement value of the radiation thermometer to have a set value when a film is not grown on the substrate; and executing a constant output control to maintain an output of the heating unit constant when a film causing thin-film interference in a wavelength measured by the radiation thermometer is grown on the substrate.
Public/Granted literature
- US20150325488A1 VAPOR PHASE GROWTH METHOD AND VAPOR PHASE GROWTH APPARATUS Public/Granted day:2015-11-12
Information query
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