Invention Grant
- Patent Title: Method of separating electronic devices having a back layer
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Application No.: US15403676Application Date: 2017-01-11
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Publication No.: US09917013B2Publication Date: 2018-03-13
- Inventor: Gordon M. Grivna
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoeniz
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoeniz
- Agent Kevin B. Jackson
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/683 ; H01L21/3065 ; H01L21/67

Abstract:
In one embodiment, die are singulated from a wafer having a back layer by placing the wafer onto a carrier substrate with the back layer adjacent the carrier substrate, forming singulation lines through the wafer to expose the back layer within the singulation lines, and applying a pressure substantially uniformly along the second major surface to batch separate the layer of material in the singulation lines. In one embodiment, a fluid filled vessel can be used to apply the pressure.
Public/Granted literature
- US20170125294A1 METHOD OF SEPARATING ELECTRONIC DEVICES HAVING A BACK LAYER AND APPARATUS Public/Granted day:2017-05-04
Information query
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