Invention Grant
- Patent Title: Method and apparatus with channel stop doped devices
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Application No.: US13693906Application Date: 2012-12-04
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Publication No.: US09917018B2Publication Date: 2018-03-13
- Inventor: Victor Moroz
- Applicant: Victor Moroz
- Applicant Address: US CA Mountain View
- Assignee: Synopsys, Inc.
- Current Assignee: Synopsys, Inc.
- Current Assignee Address: US CA Mountain View
- Agency: Haynes Beffel & Wolfeld LLP
- Agent Yiding Wu
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8238 ; H01L21/762 ; G06F17/50
Abstract:
Methods and apparatuses relate to implanting a surface of a semiconductor substrate with dopants, making undoped semiconductor material directly on the surface implanted with the dopants, and making a transistor with a transistor channel in the undoped semiconductor material, such that the transistor channel of the transistor remains undoped throughout manufacture of the integrated circuit.
Public/Granted literature
- US20140154855A1 METHOD AND APPARATUS WITH CHANNEL STOP DOPED DEVICES Public/Granted day:2014-06-05
Information query
IPC分类:
