Invention Grant
- Patent Title: Silicon single crystal wafer, manufacturing method thereof and method of detecting defects
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Application No.: US15198770Application Date: 2016-06-30
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Publication No.: US09917022B2Publication Date: 2018-03-13
- Inventor: Woo Young Sim
- Applicant: LG SILTRON INC.
- Applicant Address: KR Gumi-si, Gyeongsangbuk-Do
- Assignee: SK SILTRON CO., LTD.
- Current Assignee: SK SILTRON CO., LTD.
- Current Assignee Address: KR Gumi-si, Gyeongsangbuk-Do
- Agency: KED & Associates, LLP
- Priority: KR10-2013-0001875 20130108; KR10-2013-0001876 20130108
- Main IPC: H01L21/324
- IPC: H01L21/324 ; H01L21/66 ; H01L21/322 ; H01L29/32 ; C30B15/20 ; C30B29/06 ; C30B31/04 ; H01L21/02 ; H01L21/306
Abstract:
A silicon single crystal wafer is provided. The silicon single crystal wafer includes an IDP which is divided into an NiG region and an NIDP region, wherein the IDP region is a region where a Cu based defect is not detected, the NiG region is a region where an Ni based defect is detected and the NIPD region is a region where an Ni based defect is not detected.
Public/Granted literature
- US20160315020A1 SILICON SINGLE CRYSTAL WAFER, MANUFACTURING METHOD THEREOF AND METHOD OF DETECTING DEFECTS Public/Granted day:2016-10-27
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