A method includes depositing a first hard mask layer on a first substrate; lithographically patterning and etching the first substrate to form a semiconductor link connected to an anode semiconductor region and a cathode semiconductor region; removing the first hard mask layer from the first substrate; depositing a second hard mask layer on the first substrate; patterning a photoresist on the first substrate and etching to form an opening in the semiconductor link; etching to remove portions of the second hard mask layer to expose a portion of a sidewall of the semiconductor link; removing the photoresist from the first substrate and the semiconductor link; and recessing the sidewalls of the semiconductor link forming first anti-fuse tip and second anti-fuse tip to form an anti-fuse with an opening between the first and second anti-fuse tips.