Invention Grant
- Patent Title: Self-aligned vertical transistor with local interconnect
-
Application No.: US15172870Application Date: 2016-06-03
-
Publication No.: US09917059B2Publication Date: 2018-03-13
- Inventor: Effendi Leobandung
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L27/088 ; H01L21/8234 ; H01L23/535 ; H01L29/786 ; H01L29/423

Abstract:
A metallization scheme for vertical field effect transistors (FETs) is provided. By forming lower-level local interconnects connecting source regions located at bottom portions of semiconductor fins, and upper-level interconnects connecting adjacent metal gates located along sidewalls of channel regions of the semiconductor fins, electrical connections to the source regions and the metal gates can be provided through the lower-level local interconnects and the upper-level local interconnects, respectively. As a result, gate, source and drain contact structures are formed on the same side of vertical FETs.
Public/Granted literature
- US20170352625A1 SELF-ALIGNED VERTICAL TRANSISTOR WITH LOCAL INTERCONNECT Public/Granted day:2017-12-07
Information query
IPC分类: