Invention Grant
- Patent Title: FinFET contact structure and method for forming the same
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Application No.: US15362769Application Date: 2016-11-28
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Publication No.: US09917088B2Publication Date: 2018-03-13
- Inventor: Ming-Yuan Wu , Yen-Po Lin , Yu-Shan Lu , Che-Yuan Hsu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L27/092 ; H01L29/78 ; H01L29/08 ; H01L29/66 ; H01L21/306 ; H01L29/165 ; H01L29/06 ; H01L21/02 ; H01L21/265 ; H01L21/8238 ; H01L21/3065 ; H01L21/308

Abstract:
A device comprises a substrate comprising a first portion and a second portion separated by an isolation region, a first gate structure over the first portion, a first drain/source region and a second drain/source region in the first portion and on opposite sides of the first gate structure, wherein the first drain/source region and the second drain/source have concave surfaces, a second gate structure over the second portion and a third drain/source region and a fourth drain/source region in the second portion and on opposite sides of the second gate structure, wherein the third drain/source region and the fourth drain/source have the concave surfaces.
Public/Granted literature
- US20170077096A1 FinFET Contact Structure and Method for Forming the Same Public/Granted day:2017-03-16
Information query
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