Invention Grant
- Patent Title: Semiconductor device having an effective use of the conductive layer formed in the same process as one electrode
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Application No.: US15254509Application Date: 2016-09-01
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Publication No.: US09917115B2Publication Date: 2018-03-13
- Inventor: Hideki Matsukura
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2012-171818 20120802
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L23/00 ; G02F1/1368 ; H01L27/32
Abstract:
A semiconductor device includes a first conductive layer, a first insulating layer over the first conductive layer, first and second oxide semiconductor layers over the first insulating layer, a second conductive layer over the first oxide semiconductor layer, a third conductive layer over the second oxide semiconductor layer, a fourth conductive layer over the first oxide semiconductor layer and the second oxide semiconductor layer, a second insulating layer over the second conductive layer, the third conductive layer, and the fourth conductive layer, a fifth conductive layer electrically connected to the first conductive layer over the second insulating layer, and a sixth conductive layer over the second insulating layer. Each of the first and fifth conductive layers includes an area overlapping with the first oxide semiconductor layer. The sixth conductive layer includes an area overlapping with the second oxide semiconductor layer.
Public/Granted literature
- US20160372496A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-12-22
Information query
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