Invention Grant
- Patent Title: BSI image sensor and method of forming same
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Application No.: US15079886Application Date: 2016-03-24
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Publication No.: US09917121B2Publication Date: 2018-03-13
- Inventor: Hung-Wen Hsu , Jiech-Fun Lu , Yeur-Luen Tu , U-Ting Chen , Shu-Ting Tsai , Hsiu-Yu Cheng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A backside illumination (BSI) image sensor and a method of forming the same are provided. A method includes forming a plurality of photosensitive pixels in a substrate, the substrate having a first surface and a second surface, the second surface being opposite the first surface, the substrate having one or more active devices on the first surface. A first portion of the second surface is protected. A second portion of the second surface is patterned to form recesses in the substrate. An anti-reflective layer is formed on sidewalls of the recesses. A metal grid is formed over the second portion of the second surface, the anti-reflective layer being interposed between the substrate and the metal grid.
Public/Granted literature
- US20170278881A1 BSI Image Sensor and Method of Forming Same Public/Granted day:2017-09-28
Information query
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