Invention Grant
- Patent Title: CMOS image sensor structure with IR/NIR integration
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Application No.: US15635318Application Date: 2017-06-28
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Publication No.: US09917132B2Publication Date: 2018-03-13
- Inventor: Tsung-Han Tsai , Kun-Huei Lin , Chun-Hao Chou , Tzu-Hsuan Hsu , Ching-Chun Wang , Kuo-Cheng Lee , Yung-Lung Hsu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A semiconductor device includes a substrate, light sensing devices, at least one infrared radiation sensing device, a transparent insulating layer, an infrared radiation cut layer, a color filter layer and an infrared radiation color filter layer. The light sensing devices and the at least one infrared radiation sensing device are disposed in the substrate and are adjacent to each other. The transparent insulating layer is disposed on the substrate overlying the light sensing devices and the at least one infrared radiation sensing device. The infrared radiation cut layer is disposed on the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation. The color filter layer is disposed on the infrared radiation cut layer. The infrared radiation color filter layer is disposed on the transparent insulating layer overlying the at least one infrared radiation sensing device.
Public/Granted literature
- US20170301720A1 CMOS IMAGE SENSOR STRUCTURE WITH IR/NIR INTEGRATION Public/Granted day:2017-10-19
Information query
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