Invention Grant
- Patent Title: Self-limited, anisotropic wet etching of transverse vias in microfluidic chips
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Application No.: US14933958Application Date: 2015-11-05
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Publication No.: US09917148B2Publication Date: 2018-03-13
- Inventor: Emmanuel Delamarche , Bilge Eker , Yuksel Temiz
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Michael J. Chang, LLC
- Agent David M. Quinn
- Priority: GB1419879.0 20141107
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L29/04 ; H01L29/16 ; F16K99/00 ; B01L3/00

Abstract:
The present invention is notably directed to a method of fabrication of a microfluidic chip (1), comprising: providing (S10-S20) a wafer (10, 12) of semiconductor material having a diamond cubic crystal structure, exhibiting two opposite main surfaces (S1, S2), one on each side of the wafer, and having, each, a normal in the or direction; and performing (S30) self-limited, anisotropic wet etching steps on each of the two main surfaces on each side of the wafer, to create a via (20, 20a) extending transversely through the thickness of the wafer, at a location such that the resulting via connects an in-plane microchannel (31) on a first one (S1) of the two main surfaces to a second one (S2) of the two main surfaces, the via exhibiting slanted sidewalls (20s) as a result of the self-limited wet etching. The invention further concerns microfluidic chips accordingly obtained.
Public/Granted literature
- US20160133517A1 Self-Limited, Anisotropic Wet Etching of Transverse Vias in Microfluidic Chips Public/Granted day:2016-05-12
Information query
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