Invention Grant
- Patent Title: Trenched and implanted bipolar junction transistor
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Application No.: US15114263Application Date: 2015-02-10
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Publication No.: US09917180B2Publication Date: 2018-03-13
- Inventor: Anup Bhalla , Leonid Fursin
- Applicant: UNITED SILICON CARBIDE, INC.
- Applicant Address: US NJ Monmouth Junction
- Assignee: United Silicon Carbide, Inc.
- Current Assignee: United Silicon Carbide, Inc.
- Current Assignee Address: US NJ Monmouth Junction
- Agency: Baker & Hostetler LLP
- International Application: PCT/US2015/015156 WO 20150210
- International Announcement: WO2015/120432 WO 20150813
- Main IPC: H01L29/70
- IPC: H01L29/70 ; H01L29/732 ; H01L29/423 ; H01L29/66 ; H01L29/872 ; H01L29/10 ; H01L29/16 ; H01L29/20 ; H01L29/73 ; H01L29/861 ; H01L29/06 ; H01L27/06
Abstract:
The present invention concerns a monolithically merged trenched-and-implanted Bipolar Junction Transistor (TI-BJT) with antiparallel diode and a method of manufacturing the same. Trenches are made in a collector, base, emitter stack downto the collector. The base electrode is formed on an implanted base contact region at the bottom surface of the trench. The present invention also provides for products produced by the methods of the present invention and for apparatuses used to perform the methods of the present invention.
Public/Granted literature
- US20170005183A1 TRENCHED AND IMPLANTED BIPOLAR JUNCTION TRANSISTOR Public/Granted day:2017-01-05
Information query
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