Invention Grant
- Patent Title: Semiconductor device and manufacturing method
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Application No.: US14704692Application Date: 2015-05-05
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Publication No.: US09917187B2Publication Date: 2018-03-13
- Inventor: Johannes Josephus Theodorus Marinus Donkers , Stephan Bastiaan Simon Heil , Jan Sonsky
- Applicant: Nexperia B.V.
- Applicant Address: NL Nijmegen
- Assignee: Nexperia B.V.
- Current Assignee: Nexperia B.V.
- Current Assignee Address: NL Nijmegen
- Agency: Ohlandt, Greeley, Ruggiero & Perle, L.L.P.
- Priority: EP14167590 20140508
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/31 ; H01L21/311 ; H01L29/778 ; H01L29/45 ; H01L29/423 ; H01L29/417 ; H01L21/285 ; H01L29/47 ; H01L29/20
Abstract:
A semiconductor device comprising at least one active layer on a substrate and a first contact to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a capping layer on the metal, the capping layer comprising a diffusion barrier, wherein the capping layer is patterned to form a pattern comprising regions of the contact covered by the capping layer and regions of the contact that are uncovered.
Public/Granted literature
- US20150325698A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD Public/Granted day:2015-11-12
Information query
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