Invention Grant
- Patent Title: Thin film transistor and method for manufacturing the same, and array substrate
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Application No.: US14786055Application Date: 2015-07-14
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Publication No.: US09917208B2Publication Date: 2018-03-13
- Inventor: Macai Lu
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Shenzhen, Guangdong
- Agency: Kim Winston LLP
- Priority: CN201510394548 20150707
- International Application: PCT/CN2015/083931 WO 20150714
- International Announcement: WO2017/004840 WO 20170112
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/06 ; H01L21/266 ; H01L21/033 ; H01L21/3213

Abstract:
A TFT, a method for manufacturing the TFT, and an array substrate are disclosed. In the TFT according to the present disclosure, the nano conductive points that are independent from one another are formed in a channel area of the active layer, so that the channel area of the active layer can be divided into a plurality of sub channels that are independent from one another, and an equivalent electric field strength thereof can be increased. The larger the equivalent electric field strength is, the higher the carrier mobility ratio would be, and the larger the saturation current of the TFT would become. Therefore, the TFT with a higher definition and a higher aperture ratio can be manufactured.
Public/Granted literature
- US20170162712A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, AND ARRAY SUBSTRATE Public/Granted day:2017-06-08
Information query
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