Invention Grant
- Patent Title: Flash memory cells having trenched storage elements
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Application No.: US14254237Application Date: 2014-04-16
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Publication No.: US09917211B2Publication Date: 2018-03-13
- Inventor: Wei Zheng , Chi Chang , Unsoon Kim
- Applicant: Spansion LLC
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Agency: Lowenstein Sandler LLP
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/792 ; H01L21/8234 ; H01L27/115 ; H01L27/11568 ; H01L29/66
Abstract:
An embodiment of the present invention is directed to a memory cell. The memory cell includes a first trench formed in a semiconductor substrate and a second trench formed in said semiconductor substrate adjacent to said first trench. The first trench and the second trench each define a first side wall and a second sidewall respectively. The memory cell further includes a first storage element formed on the first sidewall of the first trench and a second storage element formed on the second sidewall of the second trench.
Public/Granted literature
- US20140225177A1 FLASH MEMORY CELLS HAVING TRENCHED STORAGE ELEMENTS Public/Granted day:2014-08-14
Information query
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