Invention Grant
- Patent Title: Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices
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Application No.: US15189925Application Date: 2016-06-22
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Publication No.: US09917215B2Publication Date: 2018-03-13
- Inventor: Shun-Ming Chen , Chien-Chih Huang , Joel P. Desouza , Augustin J. Hong , Jeehwan Kim , Chien-Yeh Ku , Devendra K. Sadana , Chuan-Wen Wang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , Bay Zu Precision Co., LTD.
- Applicant Address: US NY Armonk TW Tainan
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,BAY ZU PRECISION CO., LTD.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,BAY ZU PRECISION CO., LTD.
- Current Assignee Address: US NY Armonk TW Tainan
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L31/075
- IPC: H01L31/075 ; H01L31/0224 ; H01L31/0392 ; H01L31/18

Abstract:
A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
Public/Granted literature
- US20160300965A1 DOUBLE LAYERED TRANSPARENT CONDUCTIVE OXIDE FOR REDUCED SCHOTTKY BARRIER IN PHOTOVOLTAIC DEVICES Public/Granted day:2016-10-13
Information query
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