Invention Grant
- Patent Title: Electrical contact structure for a semiconductor component, and semiconductor component
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Application No.: US15313531Application Date: 2015-05-22
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Publication No.: US09917229B2Publication Date: 2018-03-13
- Inventor: Korbinian Perzlmaier , Bjoern Muermann , Karl Engl , Christian Eichinger
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: McDermott Will & Emery LLP
- Priority: DE102014107555 20140528
- International Application: PCT/EP2015/061387 WO 20150522
- International Announcement: WO2015/181071 WO 20151203
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/42 ; H01L51/52 ; H01L51/44 ; H01L31/0224

Abstract:
An electrical contact structure (10) for a semiconductor component (100) is specified, comprising a transparent electrically conductive contact layer (1), on which a first metallic contact layer (2) is applied, a second metallic contact layer (3), which completely covers the first metallic contact layer (2), and a separating layer (4), which is arranged between the transparent electrically conductive contact layer (1) and the second metallic contact layer (3) and which separates the second metallic contact layer (3) from the transparent electrically conductive contact layer (1).Furthermore, a semiconductor component (100) comprising a contact structure (10) is specified.
Public/Granted literature
- US20170200860A1 ELECTRICAL CONTACT STRUCTURE FOR A SEMICONDUCTOR COMPONENT, AND SEMICONDUCTOR COMPONENT Public/Granted day:2017-07-13
Information query
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