Invention Grant
- Patent Title: Switching device, method of fabricating the same, and resistive random access memory including the switching device as a selection device
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Application No.: US15206092Application Date: 2016-07-08
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Publication No.: US09917250B2Publication Date: 2018-03-13
- Inventor: Beom Yong Kim , Soo Gil Kim , Won Ki Ju
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2016-0010338 20160127
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A switching device includes a first electrode and a second electrode that are disposed over a substrate, and an electrolyte layer disposed between the first electrode and the second electrode and including a porous oxide. The switching device performs threshold switching operation on the basis of oxidation-reduction reactions of metal ions that are provided from the first electrode or the second electrode to the electrolyte layer.
Public/Granted literature
Information query
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