Invention Grant
- Patent Title: Light-emitting panel, light-emitting device using the light-emitting panel, and method for manufacturing the light-emitting panel
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Application No.: US15351748Application Date: 2016-11-15
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Publication No.: US09917274B2Publication Date: 2018-03-13
- Inventor: Hideto Ohnuma , Noriko Miyairi , Naoyuki Senda
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2011-141001 20110624
- Main IPC: H01L51/52
- IPC: H01L51/52 ; H01L27/32 ; H01L51/00 ; H01L51/50 ; H01L51/56

Abstract:
To provide a light-emitting panel in which the occurrence of crosstalk is suppressed. To provide a method for manufacturing a light-emitting panel in which the occurrence of crosstalk is suppressed. The light-emitting panel includes a first electrode of one light-emitting element, a first electrode of the other light-emitting element, and an insulating partition which separates the two first electrodes. A portion with a thickness A1 smaller than a thickness A0 of a portion of the layer containing a light-emitting organic compound, which overlaps with a side surface of the partition, is included. The ratio (B1/B0) of a thickness B1 of a portion of the second electrode, which overlaps with a side surface of the partition, to a thickness B0 of a portion of the second electrode, which overlaps with the first electrode, is higher than the ratio (A1/A0).
Public/Granted literature
Information query
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