Invention Grant
- Patent Title: Power supply system, plasma etching apparatus, and plasma etching method
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Application No.: US14376697Application Date: 2013-02-19
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Publication No.: US09922802B2Publication Date: 2018-03-20
- Inventor: Taichi Hirano , Fumitoshi Kumagai
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2012-034468 20120220
- International Application: PCT/JP2013/053998 WO 20130219
- International Announcement: WO2013/125523 WO 20130829
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H05H1/46 ; H01L21/311 ; G05B11/01 ; H01L21/768

Abstract:
A power supply system 90 includes high frequency power supplies 92 and 93 that supply a high frequency power for plasma generation; a DC power supply 91 that supplies a DC voltage to be applied to an electrode; and control unit 94 that controls the high frequency power supplies 92 and 93 and the DC power supply 91 including a first DC power supply unit 101 that supplies a first negative DC voltage V1, a second DC power supply unit 102 that supplies a second negative DC voltage V2 having a higher absolute value than the first negative DC voltage V1, and a selecting circuit 103 that selectively connects the first DC power supply unit 101 and the second DC power supply unit 102 to the electrode; and a discharging circuit 104 connected with a node 109 between the first DC power supply unit 101 and the selecting circuit 103.
Public/Granted literature
- US20150000842A1 POWER SUPPLY SYSTEM, PLASMA ETCHING APPARATUS, AND PLASMA ETCHING METHOD Public/Granted day:2015-01-01
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