Invention Grant
- Patent Title: Power up of semiconductor device having a temperature circuit and method therefor
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Application No.: US14938433Application Date: 2015-11-11
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Publication No.: US09933317B2Publication Date: 2018-04-03
- Inventor: Darryl G. Walker
- Applicant: Darryl G. Walker
- Main IPC: G01K7/16
- IPC: G01K7/16 ; G11C7/00 ; G01K7/00 ; G01K13/00 ; H03K3/012 ; H03K17/14 ; H03K17/687 ; G11C7/04 ; G11C11/406 ; H03K17/22 ; H03K21/10 ; G11C11/4074 ; G11C11/4093 ; G11C11/4096 ; G11C11/407 ; G01K7/01 ; G01K3/00

Abstract:
A semiconductor device that may include at least one temperature sensing circuit is disclosed. The temperature sensing circuits may be used to control various operating parameters to improve the operation of the semiconductor device over a wide temperature range. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at other operating temperatures. The temperature sensing circuit may provide a plurality of temperature ranges for setting the operational parameters. Each temperature range can include a temperature range upper limit value and a temperature range lower limit value and adjacent temperature ranges may overlap. The temperature ranges may be set in accordance with a count value that can incrementally change in response to the at least one temperature sensing circuit.
Public/Granted literature
- US20160064064A1 POWER UP OF SEMICONDUCTOR DEVICE HAVING A TEMPERATURE CIRCUIT AND METHOD THEREFOR Public/Granted day:2016-03-03
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