Invention Grant
- Patent Title: Substrate processing apparatus
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Application No.: US15251072Application Date: 2016-08-30
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Publication No.: US09933702B2Publication Date: 2018-04-03
- Inventor: Jiro Higashijima , Nobuhiro Ogata
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2015-172096 20150901
- Main IPC: G03F7/42
- IPC: G03F7/42

Abstract:
A processing fluid can be discharged according to a discharge type for a process involved, without a discharge defect. A substrate processing apparatus includes a nozzle and a pipeline. The nozzle is configured to discharge the processing fluid toward a substrate, and the processing fluid is supplied to the nozzle through the pipeline. The pipeline has a three-layer structure having a first layer, a second layer and a third layer in this sequence from an inner side thereof. Further, a leading end portion of the first layer and a leading end portion of the third layer are bonded to the nozzle, and the leading end portion of the first layer is located at a position which is not protruded more than a leading end portion of the second layer with respect to a discharging direction of the processing fluid.
Public/Granted literature
- US20170059996A1 SUBSTRATE PROCESSING APPARATUS Public/Granted day:2017-03-02
Information query
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