Invention Grant
- Patent Title: Decoding method, memory storage device and memory control circuit unit
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Application No.: US15185034Application Date: 2016-06-17
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Publication No.: US09934087B2Publication Date: 2018-04-03
- Inventor: Yu-Hua Hsiao , Heng-Lin Yen
- Applicant: EpoStar Electronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: EpoStar Electronics Corp.
- Current Assignee: EpoStar Electronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: TW105112619A 20160422
- Main IPC: G06F11/10
- IPC: G06F11/10 ; H03M13/09 ; G11C29/52 ; G11C29/36 ; G11C29/38 ; G11C29/44 ; G11C16/26 ; G11C16/10

Abstract:
A decoding method, a memory storage device and a memory control circuit unit are provided. The decoding method includes: reading a target physical unit based on a first read voltage level; performing a first decoding operation; reading an authentication physical unit based on a first candidate voltage level to obtain first assistance data and reading the authentication physical unit based on a second candidate voltage level to obtain second assistance data if the first decoding operation fails; obtaining a first estimation parameter according to the first assistance data and authentication data and obtaining a second estimation parameter according to the second assistance data and the authentication data; determining a second read voltage level according to the first estimation parameter and the second estimation parameter; and reading the target physical unit again based on the second read voltage level. Accordingly, the decoding efficiency may be improved.
Public/Granted literature
- US20170308432A1 DECODING METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT Public/Granted day:2017-10-26
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