Invention Grant
- Patent Title: Method and system for manufacturing a semiconductor device
-
Application No.: US14940218Application Date: 2015-11-13
-
Publication No.: US09934352B2Publication Date: 2018-04-03
- Inventor: Chi-Wen Chang , Hui Yu Lee , Ya Yun Liu , Jui-Feng Kuan , Yi-Kan Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F9/455
- IPC: G06F9/455 ; G06F17/50

Abstract:
A method of making a three-dimensional (3D) integrated circuit (IC) includes performing a series of simulations of operations of a first die of the 3DIC in response to a corresponding series of input vectors and at least one environment temperature. The method also includes adjusting, for at least one simulation in the series of simulations, the at least one environment temperature based on an operational temperature profile of a second die of the 3DIC.
Public/Granted literature
- US20160070839A1 METHOD AND SYSTEM FOR MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2016-03-10
Information query