A plasma processing apparatus includes an electrode to which a high frequency for plasma generation is applied and which serves as a mounting table for a target object. The plasma processing apparatus further includes a high frequency generation unit, a distortion component extraction unit and a waveform correction unit. The high frequency generation unit generates the high frequency by using waveform data including a set frequency component having a predetermined frequency. The distortion component extraction unit extracts a distortion component given to the high frequency in a path for transmitting the high frequency generated by the high frequency generation unit to the electrode. The waveform correction unit corrects the waveform data by combining an antiphase component obtained by inverting a phase of the distortion component and the set frequency component of the waveform data used for generation of the high frequency.