Invention Grant
- Patent Title: Sputtering target and production method of the same
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Application No.: US14784375Application Date: 2014-04-10
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Publication No.: US09934949B2Publication Date: 2018-04-03
- Inventor: Shoubin Zhang , Keita Umemoto , Masahiro Shoji
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Priority: JP2013-084660 20130415; JP2014-054655 20140318
- International Application: PCT/JP2014/060405 WO 20140410
- International Announcement: WO2014/171392 WO 20141023
- Main IPC: C23C14/00
- IPC: C23C14/00 ; H01J37/34 ; C22C9/00 ; C23C14/06 ; C23C14/34 ; C22C28/00 ; B22F3/10

Abstract:
A sputtering target consists of a sintered body having a component composition consisting of: Ga of 10 to 40 at. % and Na of 0.1 to 15 at. % as metal elements; and the balance being Cu and inevitable impurities. The sintered body contains the Na in a form of Na compounds consisting of at least one compound selected from the group consisting of sodium sulfate, sodium sulfite, sodium selenate, and sodium selenite, the sintered body has a composition in which a Na compound phase is dispersed, and an average grain size of the Na compound phase is 10 μm or less.
Public/Granted literature
- US20160079044A1 SPUTTERING TARGET AND PRODUCTION METHOD OF THE SAME Public/Granted day:2016-03-17
Information query
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