Invention Grant
- Patent Title: Method of processing bonded wafer
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Application No.: US15474766Application Date: 2017-03-30
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Publication No.: US09934957B2Publication Date: 2018-04-03
- Inventor: Hirohiko Kozai , Kazuki Terada , Meiyu Piao
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain, Ltd.
- Priority: JP2016-077308 20160407
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/66 ; H01L21/68 ; H01L21/687 ; G06T7/00

Abstract:
A wafer is bonded to a support plate by cutting off, with a cutting blade, an annular portion of the bonded wafer which extends from the outer peripheral edge of the bonded wafer to a position that is spaced radially inwardly toward the center of the bonded wafer by a predetermined distance. Bonding is done by a method that includes a captured image forming step of irradiating the outer peripheral edge of the bonded wafer with light emitted from an irradiating unit and passing through a through hole, and imaging the outer peripheral edge of the bonded wafer with an imaging camera disposed in facing relation to the irradiating unit with the bonded wafer interposed therebetween, thereby to capture an image, and an outer peripheral edge position detecting step of detecting an outer peripheral edge position of the bonded wafer on the basis of the captured image.
Public/Granted literature
- US20170294300A1 METHOD OF PROCESSING BONDED WAFER Public/Granted day:2017-10-12
Information query
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