Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Invention Grant

US09934962B2 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium 有权

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Patent Title: Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
Application No.: US15223288

Application Date: 2016-07-29
Publication No.: US09934962B2

Publication Date: 2018-04-03
Inventor: Yoshitomo Hashimoto , Yoshiro Hirose , Tatsuru Matsuoka
Applicant: HITACHI KOKUSAI ELECTRIC INC.
Applicant Address: JP Tokyo
Assignee: HITACHI KOKUSAI ELECTRIC INC.
Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
Current Assignee Address: JP Tokyo
Agency: Volpe and Koenig, P.C.
Priority: JP2015-155526 20150805
Main IPC: H01L21/314
IPC: H01L21/314 ; C23C16/455 ; H01L21/02

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Abstract:

A method of manufacturing a semiconductor device includes a process of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor containing a predetermined element to the substrate; supplying a first reactant containing nitrogen and carbon to the substrate; supplying a second reactant containing nitrogen to the substrate; and supplying a third reactant containing oxygen to the substrate, wherein in the cycle, a supply amount of the second reactant is set to be smaller than a supply amount of the first reactant.

Public/Granted literature

US20170040157A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM Public/Granted day:2017-02-09

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/314	......无机层（H01L21/3105，H01L21/32优先）