Invention Grant
- Patent Title: Rework and stripping of complex patterning layers using chemical mechanical polishing
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Application No.: US14838491Application Date: 2015-08-28
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Publication No.: US09934980B2Publication Date: 2018-04-03
- Inventor: Jassem A. Abdallah , Raghuveer R. Patlolla , Brown C. Peethala
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Steven J. Meyers
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/306 ; H01L21/311 ; H01L21/768 ; H01L21/321 ; H01L21/308 ; H01L21/3213 ; H01L21/02
Abstract:
A method utilizing a chemical mechanical polishing process to remove a patterned material stack comprising at least one pattern transfer layer and a template layer during a rework process or during a post pattern transfer cleaning process is provided. The pattern in the patterned material stack is formed by pattern transfer of a directed self-assembly pattern generated from microphase separation of a self-assembly material.
Public/Granted literature
- US20150371863A1 REWORK AND STRIPPING OF COMPLEX PATTERNING LAYERS USING CHEMICAL MECHANICAL POLISHING Public/Granted day:2015-12-24
Information query
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