Invention Grant
- Patent Title: Stress mitigation for thin and thick films used in semiconductor circuitry
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Application No.: US14170878Application Date: 2014-02-03
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Publication No.: US09934983B2Publication Date: 2018-04-03
- Inventor: Zoltan Ring , Donald A. Gajewski , Scott Thomas Sheppard , Daniel Namishia
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agent Anthony J. Josephson
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/762 ; H01L21/311 ; H01L21/768 ; H01L23/522 ; H01L23/00 ; H01L23/29 ; H01L23/31 ; H01L23/532
Abstract:
A semiconductor device is configured to reduce stress in one or more film layers in the device. According to one embodiment, the semiconductor device includes a substrate, a discontinuous dielectric layer on a first surface of the substrate, and a substantially continuous encapsulation layer over the first surface of the substrate and the discontinuous dielectric layer. Notably, the dielectric layer may be broken into one or more dielectric sections in order to relieve stress in the semiconductor device.
Public/Granted literature
- US20150221574A1 STRESS MITIGATION FOR THIN AND THICK FILMS USED IN SEMICONDUCTOR CIRCUITRY Public/Granted day:2015-08-06
Information query
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