Invention Grant
- Patent Title: Method of forming fine patterns
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Application No.: US15049268Application Date: 2016-02-22
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Publication No.: US09934986B2Publication Date: 2018-04-03
- Inventor: Jeong-seop Shim , Seok-han Park , Bum-seok Seo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0057540 20150423
- Main IPC: H01L21/331
- IPC: H01L21/331 ; H01L21/311 ; H01L21/3213 ; H01L21/033
Abstract:
Provided is a method of forming fine patterns, which is capable of easily forming a plurality of patterns repeatedly with a fine pitch when forming patterns necessary for manufacturing a highly integrated semiconductor device exceeding a resolution limit of a photolithography process.
Public/Granted literature
- US20160314987A1 METHOD OF FORMING FINE PATTERNS Public/Granted day:2016-10-27
Information query
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