Invention Grant
- Patent Title: Shallow trench isolation trenches and methods for NAND memory
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Application No.: US15499728Application Date: 2017-04-27
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Publication No.: US09934999B2Publication Date: 2018-04-03
- Inventor: Yusuke Yoshida
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus LLP
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/02 ; H01L27/11529 ; H01L27/06 ; H01L27/11526 ; H01L27/11546
Abstract:
A NAND memory is provided that includes a memory cell region and a peripheral region. The peripheral region includes a shallow trench isolation trench disposed in a substrate. The shallow trench isolation trench includes a first top surface, and a second top surface. A difference between a height of the second top surface and a height of the first top surface is less than a predetermined value ΔMAX.
Public/Granted literature
- US20170229339A1 SHALLOW TRENCH ISOLATION TRENCHES AND METHODS FOR NAND MEMORY Public/Granted day:2017-08-10
Information query
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