Invention Grant
- Patent Title: Method of processing a wafer and wafer processing system
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Application No.: US15628254Application Date: 2017-06-20
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Publication No.: US09935010B2Publication Date: 2018-04-03
- Inventor: Karl Priewasser , Hitoshi Hoshino
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: DISCO Corporation
- Current Assignee: DISCO Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain Ltd.
- Priority: DE102016211044 20160621
- Main IPC: H01L21/8222
- IPC: H01L21/8222 ; H01L27/01 ; H01L21/76 ; B23K26/08 ; B28D5/00 ; B23K26/364
Abstract:
A wafer has a device area on one side with a plurality of devices partitioned by a plurality of division lines. Either side of the wafer is attached to an adhesive tape supported by a first annular frame. A modified region is formed in the wafer along the division lines by a laser. The wafer is placed on a support member whose outer diameter is smaller than an inner diameter of the first annular frame. After applying the laser beam, the adhesive tape is expanded thereby dividing the wafer along the division lines. A second annular frame is attached to a portion of the expanded adhesive tape. An inner diameter of the second annular frame is smaller than the outer diameter of the support member and smaller than the inner diameter of the first annular frame.
Public/Granted literature
- US20170365519A1 METHOD OF PROCESSING A WAFER AND WAFER PROCESSING SYSTEM Public/Granted day:2017-12-21
Information query
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