Invention Grant
- Patent Title: Flexible device modulation by oxide isolation structure selective etching process
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Application No.: US14248755Application Date: 2014-04-09
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Publication No.: US09935013B2Publication Date: 2018-04-03
- Inventor: Long-Jie Hong , Chih-Lin Wang , Kang-Min Kuo
- Applicant: Taiwan Semiconductor Manufacturing CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8234 ; H01L27/088 ; H01L29/66 ; H01L29/06 ; H01L29/51 ; H01L29/49
Abstract:
A semiconductor device with an increased effective gate length or an increased effective channel width, and a method of forming the same are provided. The effective gate length or the effective channel width of the device is increased by lowering a top surface of an oxide isolation structure below the gate of the semiconductor device.
Public/Granted literature
- US20150294914A1 Flexible Device Modulation By Oxide Isolation Structure Selective Etching Process Public/Granted day:2015-10-15
Information query
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